schottky barrier diode RBQ30T65A l applications l dimensions (unit : mm) l structure general rectification l features 1)cathode common type. 2)low i r 3)high reliability l construction silicon epitaxial planer symbol unit v rm v v r v io a i fsm a tj c tstg c symbol min. typ. max. unit conditions v f - - 0.69 v i f =15a i r - - 450 a v r =65v l absolute maximum ratings (tc=25 ? c) l electrical characteristics (tj=25 c) (*1) rating of per diode : io/2 storage temperature - 40 to + 150 average rectified forward current (*1) 30 forward current surge peak (60hz ? 1cyc) 100 junction temperature 150 parameter limits reverse voltage (repetitive) 65 reverse voltage (dc) 65 reverse current parameter forward voltage rohm : to220fn manufacture date 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 1.2 1.3 0.8 (1) (2) (3) >y>>>?<>>>? fff>>>>y >>>?<>>>t >?>>?<>>>t >y>t>>?<>>>t >t>>??<>>>t fff>>>>y >>>?<>>>? fff>>>>y >>>??<>>>y 0.05 >t>>a?<>>> 13.5min 8.0 >y>>>?<>>> >>>>>f>>>>t
RBQ30T65A 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 ta=125 c ta=25 c ta=150 c ta= - 25 c ta=75 c 0 20 40 60 80 100 ta=25 c v r =65v n=30pcs ave:40.08 m a 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 ta= - 25 c ta=25 c ta=125 c ta=150 c ta=75 c 1 10 100 1000 10000 0 5 10 15 20 25 30 f=1mhz 600 610 620 630 640 650 660 670 680 690 700 ave:645.4mv ta=25 c i f =15a n=30pcs 1200 1210 1220 1230 1240 1250 1260 1270 1280 1290 1300 ave:1225.8pf ta=25 c f=1mhz v r =0v n=10pcs forward voltage v f (mv) v f - i f characteristics forward current:i f (a) reverse voltage v r (v) v r - i r characteristics reverse current:ir( m a) capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r ( m a) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ30T65A 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) 0 5 10 15 20 25 30 ave:16.1ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 50 100 150 200 250 300 350 400 450 500 1 10 100 0 50 100 150 200 250 300 350 400 450 500 1 10 100 t i fsm 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 dc d=1/2 sin( q 180) 0 50 100 150 200 250 300 350 400 450 500 8.3ms 1cyc i fsm i fsm disresion map peak surge forward current:i fsm (a) trr dispersion map reverse recovery time:trr(ns) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 8.3ms i fsm 1cyc 8.3ms 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ30T65A 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 sin( q 180) dc d=1/2 0 10 20 30 40 50 60 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 ave:5.9kv no break at 30kv c=100pf r=1.5k w c=200pf r=0 w reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) electrostatic discharge test esd(kv) esd dispersion map v r io t tj=150 c d=t/t v r =30v 0a 0v v r io t tj=150 c d=t/t t v r =30v 0a 0v t 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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